 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| D S G D S G S SO 2 T- 27 APT10050JN 1000V 20.5A 0.50 "UL Recognized" File No. E145592 (S) ISOTOP(R) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage (R) SINGLE DIE ISOTOP(R) PACKAGE All Ratings: TC = 25C unless otherwise specified. APT 10050JN UNIT Volts Amps N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000 20.5 82 30 520 4.16 -55 to 150 300 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 and Inductive Current Clamped Volts Watts W/C C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 A) On State Drain Current 2 MIN APT10050JN TYP MAX UNIT Volts 1000 ID(ON) APT10050JN 20.5 Amps (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 2.5mA) 2 RDS(ON) APT10050JN 0.50 Ohms IDSS IGSS VGS(TH) 250 1000 100 2 4 A nA Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT C/W 050-0037 Rev F 0.24 0.06 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT10050JN Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 5425 710 230 235 24 107 15 15 47 15 6500 995 350 370 36 160 30 30 75 30 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage 1 MIN APT10050JN TYP MAX UNIT 20.5 82 1.8 1280 16 2000 32 Amps APT10050JN 2 (VGS = 0V, IS = -ID [Cont.]) Volts ns C Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) PACKAGE CHARACTERISTICS Symbol LD LS VIsolation CIsolation Torque Characteristic / Test Conditions Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT nH Volts 3 5 2500 35 13 pF in-lbs 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE 0.001 10-5 10-4 Note: PDM t1 t2 Duty Factor D = t1/t2 050-0037 Rev F Z JC Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT10050JN 50 VGS=6, 7, 8, 9, 10V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 40 50 VGS=7, 8, 9, 10V 40 6V 30 5V 30 5V 20 20 10 4V 10 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 50 TJ = -55C ID, DRAIN CURRENT (AMPERES) 40 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TJ = +25C TJ = +125C 0 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 3.0 2.5 2.0 1.5 1.0 TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO = 10V @ 0.5 I [Cont.] V GS D 0 30 VGS=10V VGS=20V 20 TJ = +125C TJ = +25C 0 VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 10 0.5 0.0 TJ = -55C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 25 ID, DRAIN CURRENT (AMPERES) 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.2 20 1.1 15 1.0 10 0.9 5 0.8 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 I = 0.5 I [Cont.] D D 0 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 0.7 -50 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-0037 Rev F 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.4 -50 APT10050JN 100 ID, DRAIN CURRENT (AMPERES) 50 OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) 20,000 10,000 Ciss 5,000 10 5 1mS 10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE 100mS DC Coss 1,000 500 Crss .1 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200 100 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 VDS=100V VDS=200V 16 160 12 VDS=500V 8 120 TJ =+150C 80 4 40 TJ =+25C TJ =-55C 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 0 APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 1.95 (.077) 2.14 (.084) * Source Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source 050-0037 Rev F Gate Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. |
Price & Availability of APT10050JN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |